Journal
PHYSICAL REVIEW LETTERS
Volume 127, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.127.116402
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Funding
- U.S. DOE, Office of Science BES [DE-SC0004890]
- National Basic Research Program of China [2019YFA0308403]
- NSFC [11874298, 11822407, 11874117, 11574051]
- German Federal Ministry of Education and Research (BMBF) via the Quantum Future project MajoranaChips within the program Photonic Research Germany [13N15264]
- UB Center for Computational Research
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A general and tunable platform has been proposed to achieve high-density arrays of quantum spin-valley Hall kink (QSVHK) states based on a two-dimensional hexagonal topological insulator. The QSVHK states are found to be topologically protected by valley-inversion and time-reversal symmetries, with quantized conductance against disorder. These states can be realized in bismuthene through alloy engineering, surface functionalization, or electric field, supporting nonvolatile applications at room temperature.
We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably, the conductance of QSVHK states remains quantized against both nonmagnetic short- and long-range and magnetic long-range disorder, verified by the Green-function calculations. Based on first-principles results and our fabricated samples, we show that QSVHK states, protected with a gap up to 287 meV, can be realized in bismuthene by alloy engineering, surface functionalization, or electric field, supporting nonvolatile applications of spin-valley filters, valves, and waveguides even at room temperature.
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