4.8 Article

Field-Tunable One-Sided Higher-Order Topological Hinge States in Dirac Semimetals

Journal

PHYSICAL REVIEW LETTERS
Volume 127, Issue 6, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.127.066801

Keywords

-

Funding

  1. National Natural Science Foundation of China [11925402, 11974249]
  2. National Basic Research Program of China [2015CB921102]
  3. Strategic Priority Research Program of Chinese Academy of Sciences [XDB28000000]
  4. Natural Science Foundation of Shanghai [19ZR1437300]
  5. Guangdong province [2020KCXTD001, 2016ZT06D348]
  6. Shenzhen High-level Special Fund [G02206304, G02206404]
  7. Science, Technology and Innovation Commission of Shenzhen Municipality [ZDSYS20170303165926217, JCYJ201704 12152620376, KYTDPT20181011104202253]
  8. China Postdoctoral Science Foundation [2019M661678]
  9. SUSTech Presidential Postdoctoral Fellowship

Ask authors/readers for more resources

The paper discusses the Fermi-arc mechanism of the 3D quantum Hall effect in Weyl semimetals and proposes a method to achieve one-sided hinge states in Cd3As2-like Dirac semimetals using a tilted magnetic field. Additionally, a new experimental approach to detect these one-sided hinge states is suggested.
Recently, higher-order topological matter and 3D quantum Hall effects have attracted a great amount of attention. The Fermi-arc mechanism of the 3D quantum Hall effect proposed to exist in Weyl semimetals is characterized by the one-sided hinge states, which do not exist in all the previous quantum Hall systems, and more importantly, pose a realistic example of the higher-order topological matter. The experimental effort so far is in the Dirac semimetal Cd3As2, where, however, time-reversal symmetry leads to hinge states on both sides of the top and bottom surfaces, instead of the aspired one-sided hinge states. We propose that under a tilted magnetic field, the hinge states in Cd3As2-like Dirac semimetals can be one sided, highly tunable by field direction and Fermi energy, and robust against weak disorder. Furthermore, we propose a scanning tunneling Hall measurement to detect the one-sided hinge states. Our results will be insightful for exploring not only the quantum Hall effects beyond two dimensions, but also other higher-order topological insulators in the future.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available