Journal
PHYSICAL REVIEW LETTERS
Volume 126, Issue 21, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.126.213601
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Funding
- National Science Foundation [2003493]
- DFG Fellowship [UL 474/1-1]
- Federal Ministry of Education and Research of Germany (BMBF) [13N14921]
- U.S. Department of Energy's National Nuclear Security Administration [DE-NA-0003525]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [2003493] Funding Source: National Science Foundation
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A high-density sample of negatively charged silicon-vacancy (SiV-) centers in diamond was characterized using collinear optical multidimensional coherent spectroscopy, revealing a hidden population of SiV- centers with significant spectral inhomogeneity and extended electronic T-2 times, likely caused by strain and providing a potential mechanism for controlling electric coherence in color-center-based quantum devices.
We characterize a high-density sample of negatively charged silicon-vacancy (SiV-) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of SiV- centers that is not typically observed in photoluminescence and which exhibits significant spectral inhomogeneity and extended electronic T-2 times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
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