Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 15, Issue 8, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202100222
Keywords
phase-change materials; phase-change memories; superlattices
Funding
- Shanghai Municipal Science and Technology Commission [19JC1416803]
- National Natural Science Foundation of China [61474083]
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A multilevel phase-change memory cell based on a CrGeTe/HfGeSb superlattice structure is proposed, with SLL thin films exhibiting a stable and reversible three-step phase-change process. This design is identified as a feasible way to increase storage density.
A multilevel phase-change memory cell that is based on a CrGeTe(CrGT)/HfGeSb(HfGS) superlattice-like (SLL) structure is proposed. With increasing temperature in resistance-temperature tests, the SLL thin films exhibit a three-step phase-change process that corresponds to the crystallization of Sb, GeTe, and CrGeTe. A stable and reversible three-step phase change is identified as the key characteristic for realizing multilevel storage. This so-designed multiple-crystallization SLL structure is a feasible way to increase the storage density.
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