Atomic Layer Deposition of AlN on Graphene

Graphene is a material with great promise for several applications within electronics. However, using graphene in any such application requires its integration in a stack of thin layers of materials. The ideal structure of graphene has a fully saturated surface without any binding sites for chemisorption of growth species, making film growth on graphene highly challenging. Herein, an attempt to deposit very thin layers of AlN using an atomic layer deposition approach is reported. It is demonstrated using X-ray photoelectron spectroscopy that Al-N are formed in the films deposited on graphene and shown by scanning electron microscopy and atomic force microscopy that the films have an island morphology. These results may be considered promising toward the development of a growth protocol for AlN on graphene and possibly also for 2D AlN fabrication.

Automated summary

This study attempted to deposit very thin layers of AlN on graphene using atomic layer deposition, and confirmed the formation of Al-N bonds in the films through X-ray photoelectron spectroscopy. The morphology of the films was observed to be island-like by scanning electron microscopy and atomic force microscopy. These results provide promising insights for the development of a growth protocol for AlN on graphene.