Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed-Grown m-Plane GaN Substrate

The extended defects in m-plane seed-grown GaN substrate have been investigated by cathodoluminescence (CL) and transmission electron microscopy (TEM). The presence of basal-plane stacking faults (BSFs) has been confirmed in the edge part of seed growth. The luminescence features of BSFs are characterized by high-resolution CL with monochromatic image and spatially resolved spectral analysis. Most stacking faults are intrinsic I-1 BSFs with characteristic emission peak centered at 3.42 eV. There are a few intrinsic I-2 BSFs which show varied emission energies of 3.33-3.38 eV. The motion of dislocations under electron beam irradiation has also been monitored and the correlation with stacking faults is discussed.

Automated summary

The extended defects in m-plane seed-grown GaN substrate, specifically the presence of basal-plane stacking faults (BSFs), have been studied using cathodoluminescence (CL) and transmission electron microscopy (TEM). The luminescence characteristics and emission peaks of I-1 and I-2 BSFs have been identified through high-resolution CL and spatially resolved spectral analysis. Additionally, the movement of dislocations under electron beam irradiation and its correlation with stacking faults have been discussed.