Design of low power silicon electro optic modulators based on hybrid plasmonic ring resonator

In this paper, an ITO-based hybrid plasmonic ring resonator modulator has been designed and proposed. Improving the extinction ratio (ER) and the quality factor is considered in designing the modulator. The proposed structure in this paper seeks to reduce the capacitance by reducing the surface between silicon and ITO/HfO2 interface in the ring. Two structures have been proposed based on the ring resonator. In the first structure, high-quality factor, low insertion loss (IL), and low power consumption are obtained, equal to 777, 0.28 dB, and 103fJ. In the second proposed structure, the ER is 12.22 dB, and the quality factor is 514. The finite-difference time-domain (FDTD) method has been used to investigate the modulator characteristic.

Automated summary

This paper presents a design of an ITO-based hybrid plasmonic ring resonator modulator aimed at improving the extinction ratio and quality factor. By reducing the surface area between silicon and the ITO/HfO2 interface, the capacitance is effectively reduced. Two different structures of the modulator achieve high quality factor and low power consumption, low insertion loss, as well as high extinction ratio and quality factor. The modulator characteristics are investigated using the finite-difference time-domain (FDTD) method.