Resistive switching effect caused by oxygen vacancy migration in SrTiO3 ceramic

STO has been studied for many years and is mainly used in various fields such as ceramic capacitors, memristors and solar cells. The influence of oxygen vacancies on its physical properties is very important. In this article, we report the dielectric, impedance and current-voltage characteristics of STO ceramic at different temperatures. When the temperature is increased, the oxygen vacancy concentration of the STO ceramic increases, resulting in dielectric dispersion and dielectric relaxation behavior. In the analysis of impedance spectroscopy, oxygen vacancies mainly undergo secondary ionization and conduct grain conduction within the STO. The conductivity of STO ceramic increases with increasing temperature, mainly due to the increase in oxygen vacancy concentration. The STO ceramic at high temperature exhibits a current-voltage characteristic curve similar to the resistive switching effect, due to the migration of oxygen vacancies.

Automated summary

This article investigates the properties of STO ceramic at different temperatures, revealing that the oxygen vacancy concentration increases with temperature, leading to changes in dielectric effect and conductivity.