4.4 Article

Photoelectrochemistry of metalloporphyrin-modified GaP semiconductors

Journal

PHOTOSYNTHESIS RESEARCH
Volume 151, Issue 2, Pages 1-10

Publisher

SPRINGER
DOI: 10.1007/s11120-021-00834-2

Keywords

Artificial photosynthesis; Photoelectrochemistry; Molecular-modified photocathodes; Metalloporphyrins; Gallium phosphide; Hydrogen evolution

Categories

Funding

  1. National Science Foundation [1653982]
  2. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0021186]
  3. Camille Dreyfus Teacher-Scholar Awards Program
  4. IGERT-SUN fellowship - National Science Foundation [1144616]
  5. Phoenix Chapter of the ARCS Foundation
  6. Heiwa Nakajima Foundation
  7. U.S. Department of Energy (DOE) [DE-SC0021186] Funding Source: U.S. Department of Energy (DOE)

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Photoelectrosynthetic materials utilize the power of the sun to produce fuels and other chemical products, but the operating principles governing their performance and effective methods for their assembly are not fully understood. This study reports the application of metalloporphyrins in assembling hybrid photoelectrosynthetic materials and investigates their photoelectrochemical properties. The hybrid electrodes prepared by UV-induced grafting of homogeneous metalloporphyrin reagents onto heterogeneous gallium phosphide surfaces show potential for better understanding charge-transfer kinetics at semiconductor|catalyst|liquid interfaces.
Photoelectrosynthetic materials provide a bioinspired approach for using the power of the sun to produce fuels and other value-added chemical products. However, there remains an incomplete understanding of the operating principles governing their performance and thereby effective methods for their assembly. Herein we report the application of metalloporphyrins, several of which are known to catalyze the hydrogen evolution reaction, in forming surface coatings to assemble hybrid photoelectrosynthetic materials featuring an underlying gallium phosphide (GaP) semiconductor as a light capture and conversion component. The metalloporphyrin reagents used in this work contain a 4-vinylphenyl surface-attachment group at the beta-position of the porphyrin ring and a first-row transition metal ion (Fe, Co, Ni, Cu, or Zn) coordinated at the core of the macrocycle. In addition to describing the synthesis, optical, and electrochemical properties of the homogeneous porphyrin complexes, we also report on the photoelectrochemistry of the heterogeneous metalloporphyrin-modified GaP semiconductor electrodes. These hybrid, heterogeneous-homogeneous electrodes are prepared via UV-induced grafting of the homogeneous metalloporphyrin reagents onto the heterogeneous gallium phosphide surfaces. Three-electrode voltammetry measurements performed under controlled lighting conditions enable determination of the open-circuit photovoltages, fill factors, and overall current-voltage responses associated with these composite materials, setting the stage for better understanding charge-transfer and carrier-recombination kinetics at semiconductor|catalyst|liquid interfaces.

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