Preparation and characterization of C:Se nano-rods ablated on porous silicon

In this work, Carbon:Selenium (C:Se) nanoparticles (NPs) are preparation by laser ablation at diverse laser energy 200, 400, 600,800 and 1000 mJ with 100 shots and laser wavelength 1064 nm then deposited on porous silicon (PS). PS are fabricated using electrochemical etching (ECE) method for p-type crystalline silicon (c-Si) wafers of (100) orientation.The pattern of X-ray diffraction (XRD) showed the sample's nanocrystaline.Results of the Atomic force microscope (AFM) analysis an average diameter of 39.76 nm coordinated in a rod-like shape appears for C:Se NPs. UV-vis result displayed that the optical energy gap of the nanoparticles increases. The electrical properties such as barrier height (phi B) and ideality factor (n) of the Al/C:SeNPs/PS/Si/Al heterojunction were determined from the current density-voltage (J-V) measurements.

Automated summary

Carbon:Selenium nanoparticles were prepared by laser ablation at different laser energies and wavelengths, followed by deposition on porous silicon. The nanocrystalline nature and rod-like shape of the particles were confirmed through XRD and AFM analysis, with an increase in optical energy gap observed. The electrical properties of the Al/C:SeNPs/PS/Si/Al heterojunction were determined through J-V measurements.