Related references
Note: Only part of the references are listed.Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
Zhongjie Ren et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Nearly Efficiency-Droop-Free AlGaN-Based Deep-Ultraviolet Light-Emitting Diode Without Electron-Blocking Layer
Hongfeng Jia et al.
JOURNAL OF ELECTRONIC PACKAGING (2020)
Integrating remote reflector and air cavity into inclined sidewalls to enhance the light extraction efficiency for AlGaN-based DUV LEDs
Ji Zhang et al.
OPTICS EXPRESS (2020)
Joint evaluation of internal quantum efficiency and light extraction efficiency for AlGaN-based deep ultraviolet LEDs considering optical polarization properties
Huimin Lu et al.
JOURNAL OF APPLIED PHYSICS (2020)
A Critical Review on Ultraviolet Disinfection Systems against COVID-19 Outbreak: Applicability, Validation, and Safety Considerations
Milad Raeiszadeh et al.
ACS PHOTONICS (2020)
High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light Extraction
Jih-Yuan Chang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Michael Kneissl et al.
NATURE PHOTONICS (2019)
Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes
Yuxin Zheng et al.
NANOSCALE RESEARCH LETTERS (2019)
Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission
Kangkai Tian et al.
JOURNAL OF APPLIED PHYSICS (2019)
Improving the Light-Extraction Efficiency of AlGaN DUV-LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector
Noritoshi Maeda et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2018)
Light Extraction Efficiency Analysis of Flip-Chip Ultraviolet Light-Emitting Diodes With Patterned Sapphire Substrate
Yu Kee Ooi et al.
IEEE PHOTONICS JOURNAL (2018)
On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
Jiamang Che et al.
NANOSCALE RESEARCH LETTERS (2018)
On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes
Zi-Hui Zhang et al.
OPTICS EXPRESS (2017)
Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening
Yanan Guo et al.
APPLIED PHYSICS LETTERS (2017)
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
Takayoshi Takano et al.
APPLIED PHYSICS EXPRESS (2017)
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
Hideki Hirayama et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2014)
Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
Han-Youl Ryu et al.
APPLIED PHYSICS EXPRESS (2013)
InGaN/GaN light-emitting diode with a polarization tunnel junction
Zi-Hui Zhang et al.
APPLIED PHYSICS LETTERS (2013)
The Minamata Convention on Mercury: A First Step toward Protecting Future Generations
Rebecca Kessler
ENVIRONMENTAL HEALTH PERSPECTIVES (2013)
Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer
Noritoshi Maeda et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 (2013)
Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells
Huimin Lu et al.
OPTICS LETTERS (2012)
Band parameters for nitrogen-containing semiconductors
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2003)
Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures
U Tisch et al.
JOURNAL OF APPLIED PHYSICS (2001)