Journal
OPTICS EXPRESS
Volume 29, Issue 18, Pages 29557-29566Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.438436
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Funding
- National Natural Science Foundation of China [11774437, 61975243, U1701661]
- Guangdong Basic and Applied Basic Research Foundation [2019A1515010858, 2021B1515020093]
- National Key Research and Development Program of China [2018YFB1801800, 2019YFA0706302]
- Guangzhou Municipal Science and Technology Project [202103030001]
- Science and Technology Planning Project of Guangdong Province [2018B010114002]
- Local Innovative and Research Teams Project of Guangdong Provincial Pearl River Talents Program [2017BT01X121]
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This study presents low-loss deuterated silicon nitride micro-ring resonators fabricated using back-end CMOS technology, achieving strong confinement micro-ring resonators with quality factors above 2 million without the need for annealing. Furthermore, the generation of low-noise coherent Kerr microcomb states in these resonators demonstrates their potential for linear and nonlinear photonic circuits that can be co-integrated with electronic devices.
We report very low-loss deuterated silicon nitride (SiNx:D) micro-ring resonators fabricated by back-end CMOS compatible low-temperature plasma-enhanced chemical vapor deposition (PECVD) without annealing. Strong confinement micro-ring resonators with a quality factor of > 2 million are achieved, corresponding to a propagation loss in the 1460-1610 nm wavelength range of similar to 0.17 dB/cm. We further report the generation of low-noise coherent Kerr microcomb states including different perfect soliton crystals (PSC) in PECVD SiNx:D micro-ring resonators. These results manifest the promising potential of the back-end CMOS compatible SiNx:D platform for linear and nonlinear photonic circuits that can be co-integrated with electronics. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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