Optoelectronic simulation of a high efficiency C2N based solar cell via buffer layer optimization

In this paper, the C2N based solar cell has been developed and simulated with varied buffer layers (MZO, IGZO, Cd0.5Zn0.5S, and PCBM). The study is performed by utilizing the SCAPS-1D. The obtained results appear that a careful optimization of C2N parameters results in a good device performance. Increasing the thickness to 1000 nm in C2N is desirable for having a good device efficiency. The high-doping concentration and defect density above 1 x 10(15) cm(-3) in C2N is found to cause a serious deterioration in the cell performance. Among the four buffer layers utilized in the structure, IGZO displayed the best with an efficiency record of 18.57%. This preference for IGZO is argued to the favorable alignment of the IGZO/C2N energy bands enforced by the high electron mobility of IGZO. Furthermore, the operating device temperature appears a negative impact on the cell performance. The efficiency dropped sharply with the increase of the temperature. This behavior is attributed to the increase in the series resistance resulted from the deformations between the layers which is associated with the temperature raise. The optimal device performance is obtained at 300 K. The present study would have great impact in the field of solar cells production.

Automated summary

This paper developed a C2N based solar cell and simulated it with various buffer layers, showing that careful optimization of C2N parameters results in good device performance, while high-doping concentration and defect density can deteriorate cell performance. Among the buffer layers, IGZO displayed the best efficiency record of 18.57%.