Journal
OPTICAL MATERIALS
Volume 119, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.optmat.2021.111350
Keywords
Thin film; Zinc oxide; Intermediate layer; RF sputtering; Solar cells
Categories
Funding
- project CONACyT [SENER-263043]
- CONACyT-Mexico
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In this study, Highly resistive intrinsic zinc oxide (i-ZnO) thin films were deposited via RF magnetron sputtering with varying target power to investigate their structural, morphological, and optical properties. The thickness of i-ZnO as an intermediate layer in CuInSe2 (CISe) solar cells had a significant impact on photovoltaic performance, with 80 nm thickness being optimal for conversion efficiency. The results experimentally explored the correlation between i-ZnO thickness and photovoltaic performance.
Highly resistive intrinsic zinc oxide (i-ZnO) thin films were deposited via radio frequency (RF) magnetron sputtering with varying the target power (80 W-140 W) at constant sputtering gas pressure (10 mTorr), and the structural, morphological, and optical properties were investigated. The i-ZnO thin film crystallized in Wurtzite hexagonal with a preferential orientation along (002) reflection plane. The variation in morphology from partitioned nano-walls to spherical grains pursued the impact of target power on the growth mechanism of i-ZnO thin films. The optical band gap was increased from 3.16 eV (80 W) to 3.28 eV (120 W) with increasing target power. Additionally, CuInSe2 (CISe) solar cells were fabricated from modified sequentially evaporated metallic precursors by adopting different thicknesses of i-ZnO ranges from 40 nm to 120 nm. The formation of smooth and densely packed grains pursued the effective intermediate layer for the elemental interdiffusion from adjacent layers and protected against the shunt path. 80 nm was the optimum thickness of the i-ZnO film, which yielded 9.23% of conversion efficiency. A further increase of thickness from 80 nm reduced the photovoltaic performance, especially fill factor and elevated value of series resistance. These results explore experimentally the correlation between the i-ZnO thickness and its photovoltaic performance.
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