Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Low-temperature ultraclean integration of large-area MoS2 thin-film transistors with nitride micro-LEDs through a back end of line process enables the demonstration of displays with high resolution and uniformity. Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays. The MoS2 transistors exhibit median mobility of 54 cm(2) V(-1)s (-1), 210 mu A mu m(-1) drive current and excellent uniformity. The TFTs can drive micrometre-sized LEDs to 7.1 x 10(7) cd m(-)(2) luminance under low voltage. Comprehensive analysis on driving capability, response time, power consumption and modulation scheme indicates that MoS2 TFTs are suitable for a range of display applications up to the high resolution and brightness limit. We further demonstrate prototypical 32 x 32 active-matrix displays at 1,270 pixels-per-inch resolution. Moreover, our process is fully monolithic, low-temperature, scalable and compatible with microelectronic processing.

Automated summary

Low-temperature ultraclean integration of large-area MoS2 thin-film transistors with nitride micro-LEDs through a back end of line process enables high-resolution displays with excellent performance and uniformity. This integration shows the potential of MoS2 TFTs in driving micro LEDs to high luminance under low voltage, making them suitable for a range of display applications up to the high resolution and brightness limit.