Journal
NATURE MATERIALS
Volume 20, Issue 9, Pages 1177-1178Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41563-021-01055-7
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A significant spin-orbit interaction is introduced in a purely silicon heterostructure and can be adjusted by applying a gate voltage.
A substantial spin-orbit interaction is introduced in a purely silicon heterostructure and can be tuned through an applied gate voltage.
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