4.6 Article

Self-assembled magnetic heterostructure of Co/DLC films

Journal

NANOTECHNOLOGY
Volume 32, Issue 49, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ac21ec

Keywords

self-assembled; magnetic heterostructure; perpendicular magnetic anisotropy (PMA); PMA; in-plane interface; non-hydrogenated diamond like carbon (DLC)

Funding

  1. Ministry of Science and Technology of Republic of China
  2. MOST [109-2622-E-159-001, MOST 109-2112-M-159001-MY2, MOST 108-2112-M-003-014, MOST 109-2112M-003-013, MOST 109-2221-E-159 -001]

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In order to meet the rapid and large data flow requirements for 5G cloud generation, it is essential to develop warm storage device technology in the market that strikes a balance between reading/writing performance and storage capacity price. The technologies of warm storage devices are expected to utilize phase change memory, resistive random access memory or magnetoresistive random access memory, which have high potential for 5G structures. Through investigating the magnetic properties of Co on non-hydrogenated diamond like carbon films, a self-assembled magnetic heterostructure has been discovered, with applications in developing warm memory devices.
In order to adapt to the quick and large amount of necessity in data flow for 5G cloud generation, it is necessary to develop a technology of warm storage device in market which takes a great balance between the reading/writing performance and the price per storage capacity. The technologies of warm storage devices are assumed to adopt phase change memory (PCM), resistive random access memory or magnetoresistive random access memory which have the highest possibilities to 5G structures and magnetic properties of Co on non-hydrogenated diamond like carbon (DLC)/Si(100) films and Co/DLC interface are investigated. The self-assembled magnetic heterostructure is firstly reported in hexagonal close packing Co layers perpendicular magnetic anisotropy (PMA) on Co carbide layers (in-plane) during Co deposited on DLC/Si(100). A PMA/in-plane magnetic heterostructure is expected to have the highest switching current to the energy barrier ratio of near 4 in previous report, which has great potential for developing warm memory devices. Based on these unique characteristics, we provide a novel design called magnetic anisotropy-phase change memory (Mani-PCM) which can impact the developing blueprint of memory. The working process of Mani-PCM includes in set, reset and read states as a universal PCM. This brand new technology is highly promising as warm memory devices including high reading/writing performance and economical price per storage capacity.

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