Ferroelectric field-effect transistors based on HfO2: a review

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2), ten years after the first report on such a device. With a focus on the use of FeFET for nonvolatile memory application, we discuss its basic operation principles, switching mechanisms, device types, material properties and array structures. Key device performance metrics such as cycling endurance, retention, memory window, multi-level operation and scaling capability are analyzed. We also briefly survey recent developments in alternative applications for FeFETs including neuromorphic and in-memory computing as well as radiofrequency devices.

Automated summary

This article reviews the recent progress of ferroelectric hafnium oxide (HfO2) based ferroelectric field-effect transistors (FeFETs) in nonvolatile memory applications, including operation principles, switching mechanisms, performance metrics, and explores their development trends in alternative applications such as neuromorphic computing, in-memory computing, and radiofrequency devices.