Journal
NANOTECHNOLOGY
Volume 32, Issue 50, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6528/ac2845
Keywords
transistor; graphene quantum dots; plasmas; synthesis; photon detection
Funding
- Tokyo Institute of Technology
- Ministry of Science and Technology of Taiwan (MOST) [MOST 107-2628-E-011-002-MY3]
- National Taiwan University of Science and Technology
- MEXT Element Strategy Initiative to Form Core Research Center [JPMXP0112101001]
- Basic Science Research Program [NRF-2014R1A6A1030419]
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The study demonstrates a simple and controlled fabrication method of graphene quantum dot (GQD)-based single-electron transistors (SETs) for photon detectors. The GQD-SETs fabricated enable photon detection with 410 nm excitation due to the photoluminescence emission capability of GQDs.
Single-electron transistors (SETs) represent a new generation of electronic devices with high charge sensitivity, high switching speed, and low power consumption. Here a simple and controlled fabrication of graphene quantum dot (GQD)-based SETs for photon detectors has been demonstrated. The plasma-synthesized GQDs exhibit stable photoluminescence and are successfully used as the Coulomb islands between heteroepitaxial spherical-gold/platinum (HS-Au/Pt) nanogap electrodes. The as-fabricated GQD-SETs enable photon detection with 410 nm excitation owing to the ability of GQDs to generate photoluminescence emission.
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