Related references
Note: Only part of the references are listed.Phonon-limited mobility modeling of gallium nitride nanowires
Viswanathan Naveen Kumar et al.
JOURNAL OF APPLIED PHYSICS (2019)
Low field mobility in electrostatically evolved AlGaN/GaN one-dimensional channel from a two-dimensional electron gas system
Akhil S. Kumar et al.
APPLIED PHYSICS LETTERS (2019)
Ti/Au/Al/Ni/Au Low Contact Resistance and Sharp Edge Acuity for Highly Scalable AlGaN/GaN HEMTs
Yogendra K. Yadav et al.
IEEE ELECTRON DEVICE LETTERS (2019)
GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
Wenjun Li et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Progress and prospects of GaN-based VCSEL from near UV to green emission
Hsin-chieh Yu et al.
PROGRESS IN QUANTUM ELECTRONICS (2018)
Tuning band inversion symmetry of buckled III-Bi sheets by halogenation
R. R. Q. Freitas et al.
NANOTECHNOLOGY (2016)
Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth
Shouichiro Izumi et al.
APPLIED PHYSICS EXPRESS (2015)
Dopant species with Al-Si and N-Si bonding in the MOCVD of AlN implementing trimethylaluminum, ammonia and silane
R. B. dos Santos et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2015)
Ultrathin GaN nanowires: Electronic, thermal, and thermoelectric properties
A. H. Davoody et al.
PHYSICAL REVIEW B (2014)
Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment
J. Dura et al.
JOURNAL OF APPLIED PHYSICS (2012)
Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires
Massimo Mongillo et al.
NANO LETTERS (2012)
Sub-10 nm Carbon Nanotube Transistor
Aaron D. Franklin et al.
NANO LETTERS (2012)
Phononics in low-dimensional materials
Alexander A. Balandin et al.
MATERIALS TODAY (2012)
Self-consistent Poisson-Schrodinger-Monte Carlo solver: electron mobility in silicon nanowires
E. B. Ramayya et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2010)
Rigid ion model of high field transport in GaN
Shinya Yamakawa et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2009)
Recent advances in GaN transistors for future emerging applications
Manabu Yanagihara et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
Seonghoon Jin et al.
JOURNAL OF APPLIED PHYSICS (2007)
Size-quantized oscillations of the electron mobility limited by the optical and confined acoustic phonons in the nanoscale heterostructures
E. P. Pokatilov et al.
JOURNAL OF APPLIED PHYSICS (2007)
Giant enhancement of the carrier mobility in silicon nanowires with diamond coating
Vladimir A. Fonoberov et al.
NANO LETTERS (2006)
Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves
E. P. Pokatilov et al.
APPLIED PHYSICS LETTERS (2006)
High-performance E-mode AlGaN/GaN HEMTs
T. Palacios et al.
IEEE ELECTRON DEVICE LETTERS (2006)
High-performance fully depleted silicon-nanowire (diameter ≤ 5 nm) gate-all-around CMOS devices
N. Singh et al.
IEEE ELECTRON DEVICE LETTERS (2006)
High-power AlGaN/GaN HEMTs for Ka-band applications
T Palacios et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Nanophononics: Phonon engineering in nanostructures and nanodevices
AA Balandin
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2005)
Assessment of room-temperature phonon-limited mobility in gated silicon nanowires
R Kotlyar et al.
APPLIED PHYSICS LETTERS (2004)
Confined electron-confined phonon scattering rates in wurtzite AlN/GaN/AlN heterostructures
EP Pokatilov et al.
JOURNAL OF APPLIED PHYSICS (2004)
AlGaN/GaN HEMTs - An overview of device operation and applications
UK Mishra et al.
PROCEEDINGS OF THE IEEE (2002)
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher et al.
JOURNAL OF APPLIED PHYSICS (2000)