Journal
NANO RESEARCH
Volume 14, Issue 11, Pages 4243-4249Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-021-3596-4
Keywords
Cd-free quantum dots; quantum dot light-emitting diode (QLED); top-emission; angular distribution; current efficiency
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Funding
- National Key R&D Program of China [2016YFB0401700]
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High resolution and wide color gamut are key requirements for novel display technologies. Quantum dot light-emitting diodes have drawn considerable attention in recent years due to their distinguishing advantages.
High resolution and wide color gamut are two key requirements for novel display technologies. Owing to the distinguishing advantages over conventional displays, such as intrinsic wide color gamut and the possibility to achieve high resolution, quantum dot light-emitting diodes (QLED) have drawn considerable attention in recent years. On the other hand, indium phosphide quantum dots (InP QDs) have shown a great potential as a replacement for cadmium selenide (CdSe) QDs in display applications due to the inherent toxicity of cadmium-based QDs. In this study, we investigate a top-emission InP-based green QLED with optimized angular distribution. By adjusting the electrical and optical architecture, the device exhibits improved properties with a maximum current efficiency of 30.1 cd/A and a narrowed full width at half maxima (FWHM)of 31 nm, which are the best results ever reported to our knowledge.
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