Journal
NANO LETTERS
Volume 21, Issue 17, Pages 7363-7370Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c02674
Keywords
Transition metal dichalcogenide (TMD); MoS2; monolayer; XUV-trARPES; electronic structure; exciton
Categories
Funding
- National Science Foundation through the Center for Dynamics and Control of Materials via an NSF MRSEC [DMR-1720595]
- NSF-DMR [1808751]
- Welch Foundation [F-1662]
- US Airforce [FA2386-18-1-4097]
- U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05-CH11231, KC2203]
- Ministry of Science and Technology of Taiwan [MOST-107-2112-M-009-024-MY3, MOST-108-2119-M-009-011-MY3]
- Center for Emergent Functional Matter Science (CEFMS) of NCTU - Ministry of Education of Taiwan
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1808751] Funding Source: National Science Foundation
Ask authors/readers for more resources
This study utilizes sensitive time- and angle-resolved photoelectron spectroscopy to investigate MoS2 monolayers, revealing QBG values of approximately 2.10 eV at 80 K and around 2.03 eV at 300 K, well-supported by scanning tunneling spectroscopy measurements on the same material.
The electronic structure and dynamics of 2D transition metal dichalcogenide (TMD) monolayers provide important underpinnings both for understanding the many-body physics of electronic quasi-particles and for applications in advanced optoelectronic devices. However, extensive experimental investigations of semiconducting monolayer TMDs have yielded inconsistent results for a key parameter, the quasi-particle band gap (QBG), even for measurements carried out on the same layer and substrate combination. Here, we employ sensitive time- and angle-resolved photoelectron spectroscopy (trARPES) for a high-quality large-area MoS2 monolayer to capture its momentumresolved equilibrium and excited-state electronic structure in the weakexcitation limit. For monolayer MoS2 on graphite, we obtain QBG values of similar to 2.10 eV at 80 K and of similar to 2.03 eV at 300 K, results well-corroborated by the scanning tunneling spectroscopy (STS) measurements on the same material.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available