Journal
NANO LETTERS
Volume 21, Issue 18, Pages 7555-7560Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c01983
Keywords
photoswitch; electroswitch; diarylethenes; modified surfaces; molecular junctions
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Funding
- Agence Nationale de la Recherche ANR (France) [ANR-19-CE09 APMJ, ANR-10-LABX-0096 et ANR-18-IDEX-0001]
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Fabricated using electrochemical deposition, photoactive molecular junctions with DAE and BTB layers exhibit new electronic functions combining photoswitching and photorectification, showing different conductance and I-V curves in their open and closed forms, with unprecedented ON/OFF current ratios of over 10,000 at 1V.
Photoactive molecular junctions, based on 4 nm thick diarylethene (DAE) and 5 nm thick bisthienylbenzene (BTB) layers, were fabricated by electrochemical deposition. Total thickness was around 9 nm, that is, above the direct tunneling limit and in the hopping regime. The DAE units were switched between their open and closed forms. The DAE/BTB bilayer structure exhibits new electronic functions combining photoswitching and photorectification. The open form of DAE/BTB shows low conductance and asymmetric I-V curves while the closed form shows symmetric I-V curves and high conductance. More importantly, unprecedented ON/OFF current ratios of over 10 000 at 1 V were reproducibly measured.
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