Integrated Terahertz Generator-Manipulators Using Epsilon-near-Zero-Hybrid Nonlinear Metasurfaces

In terahertz (THz) technologies, generation and manipulation of THz waves are two key processes usually implemented by different device modules. Integrating THz generation and manipulation into a single compact device will advance the applications of THz technologies in various fields. Here, we demonstrate a hybrid nonlinear plasmonic metasurface incorporating an epsilon-near-zero (ENZ) indium tin oxide (ITO) layer to seamlessly combine efficient generation and manipulation of THz waves across a wide frequency band. The coupling between the plasmonic resonance of the metasurface and the ENZ mode of the ITO thin film enhances the THz conversion efficiency by more than 4 orders of magnitude. Meanwhile, such a hybrid device is capable of shaping the polarization and wavefront of the emitted THz beam via the engineered nonlinear Pancharatnam-Berry (PB) phases of the plasmonic meta-atoms. The presented hybrid nonlinear metasurface opens a new avenue toward miniaturized integrated THz devices and systems with advanced functionalities.

Automated summary

The research demonstrates a hybrid nonlinear plasmonic metasurface incorporating an ENZ indium tin oxide (ITO) layer, which integrates efficient generation and manipulation of THz waves into a single compact device. The device is capable of enhancing THz conversion efficiency by more than 4 orders of magnitude and shaping the polarization and wavefront of the emitted THz beam via engineered nonlinear PB phases, opening up a new avenue for miniaturized integrated THz devices and systems with advanced functionalities.