Journal
MRS BULLETIN
Volume 46, Issue 7, Pages 607-615Publisher
SPRINGER HEIDELBERG
DOI: 10.1557/s43577-021-00139-8
Keywords
Dopant; Qubit; Quantum information; Scanning tunneling microscopy (STM)s
Funding
- Laboratory Directed Research and Development Program at Sandia National Laboratories
- US Department of Energy [DE-NA0003525]
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APAM is a materials synthesis method that enables tailored silicon nanoelectronics with full 3D atomic precision, making an impact in quantum computing research. However, significant technique development will be required to apply APAM to fabricate circuitry with increasing numbers of qubits.
A materials synthesis method that we call atomic-precision advanced manufacturing (APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic precision, is making an impact as a powerful prototyping tool for quantum computing. Quantum computing schemes using atomic (P-31) spin qubits are compelling for future scale-up owing to long dephasing times, one- and two-qubit gates nearing high-fidelity thresholds for fault-tolerant quantum error correction, and emerging routes to manufacturing via proven Si foundry techniques. Multiqubit devices are challenging to fabricate by conventional means owing to tight interqubit pitches forced by short-range spin interactions, and APAM offers the required (angstrom-scale) precision to systematically investigate solutions. However, applying APAM to fabricate circuitry with increasing numbers of qubits will require significant technique development. Here, we provide a tutorial on APAM techniques and materials and highlight its impacts in quantum computing research. Finally, we describe challenges on the path to multiqubit architectures and opportunities for APAM technique development.
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