Journal
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
Volume 29, Issue 6, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-651X/ac13cc
Keywords
InN; DFT; strain engineering; biaxial strain; piezoelectricity; phase transition
Funding
- University of Bejaia [CNEPRU: B00L02UN060120200001]
- Algerian Ministry of High Education and Scientific Research [CNEPRU: B00L02UN060120200001]
- La Direction Generale de la Recherche Scientifique et du Developpement Technologique (DGRSDT)
- EU (European Regional Development Fund)
- project 'INNOVATION-EL' - Operational Program 'Competitiveness, Entrepreneurship and Innovation' (NSRF 2014-2020) [MIS 5002772]
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The behavior of wurtzite indium nitride under equibiaxial strain was studied using ab initio calculations based on density functional theory. A phase transition from wurtzite to graphitic-like structure was found to occur at a tensile strain of +6%, accompanied by a direct-indirect band gap transition. The non-linear enhancement of the out-of-plane piezoelectric constant in the wurtzite structure provides potential for practical applications.
Following the general strategy of 'strain engineering', ab initio calculations based on density functional theory (DFT) were performed to investigate the behavior of wurtzite indium nitride under an equibiaxial strain, applied in the basal plane. The evolution of structural, electronic, elastic and piezoelectric properties was investigated over both compressive and tensile strains up to 10%. To overcome the inherent shortcoming of DFT in reproducing band gaps, pseudo-potentials modified a la Christensen were used. A wurtzite to graphitic-like phase transition was found to take place at a tensile strain of +6% and identified to be of the first order. This transformation was found to be accompanied with a direct-indirect band gap transition. In the wurtzite structure, a non-linear enhancement of the out-of-plane piezoelectric constant was evidenced in the expansion regime where its value, near the phase transition, attains several times that of the strain free structure. This large piezoelectric response is very attractive for practical applications, such as piezoelectric sensors and resonators. Substrate candidates for growing pseudomorphic wurtzite InN with a suitable strain and appreciable critical thickness are discussed.
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