4.4 Article

0.7 % error rate 3A bidirectional current sensor using high voltage CMOS

Journal

MICROELECTRONICS JOURNAL
Volume 114, Issue -, Pages -

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2021.105127

Keywords

High-voltage (HV); Bidirectional sensing; Input voltage range; Current sensor; Sensing error

Funding

  1. Ministry of Science and Technology (MOST), Taiwan [MOST 110-2218-E-110-0 08-, MOST 109-2241-E-110-001-, MOST 109-2218-E-110-007-]
  2. Ministry of Economic Affairs, Taiwan [107-EC-17-A-17-S3-050]

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This study presents a high-accuracy bidirectional high-voltage current sensor fabricated using CMOS technology, featuring noise filter, sense stage, controller, and a switching network for direction control. The sensor includes a digital feedback loop for real-time current direction detection, with good performance in terms of silicon area, voltage error, and voltage/current sensing range.
This investigation demonstrates a high-accuracy bidirectional high-voltage (HV) current sensor fabricated using CMOS technology. Besides Noise filter, Sense stage, and Controller, the proposed sensor is featured with a Switching Network composed of transmission gates, which is able to steer the direction of the current for bidirectional sensing. A digital feedback loop comprises Controller generating a pair of digital signals to Switching Network such that the direction of the current is detected real time. The area of the proposed sensor on silicon is 1173 x 664 gm(2) fabricated by 0.5 gm high-voltage CMOS process. The sensing voltage error is 0.7% by physical measurements, where the input voltage range is 8-14 V, and the current sensing range is-3 - 3 A.

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