Journal
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Volume 271, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mseb.2021.115309
Keywords
InSb; GaAs; Quantum dot; Ge substrate; Molecular beam epitaxy; Photoluminescence
Funding
- National Science and Technology Development Agency (NSTDA), Thailand [FDA-CO-2558-1407-TH]
- Asian Office of Aerospace Research and Development (AOARD) Grant
- Office of Naval Research Global (ONRG) [FA 238616-1-4003]
- Thailand Research Fund [DPG5380002]
- NANOTEC, NSTDA, Thailand [RES-50-016-21-016]
- Grant for Development of New Faculty Staff, Ratchadaphiseksomphot Endowment Fund, Chulalongkorn University
- ASEAN University Network/Southeast Asia Engineering Education Development Network (AUN/SEED-Net) [CU-58-051-EN]
- Ratchadaphiseksomphot Fund for Postdoctoral Fellowships of Chulalongkorn University
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Various photoluminescence spectroscopies were used to study the growth-related properties of self-assembled InSb/GaAs quantum dots on (001) Ge substrate. The results revealed that the QDs are mainly located near GaAs antiphase domain boundaries. The study also showed that the morphology and structural properties of InSb QDs can be controlled by changing growth conditions, and confirmed the type-II band alignment in the system through power-dependent PL spectroscopy.
Various photoluminescence (PL) spectroscopies are applied to reveal the growth-related properties of selfassembled InSb/GaAs quantum dots (QDs) grown on (001) Ge substrate. Obtained QDs have rectangularbased shape and mainly locate near GaAs antiphase domain boundaries (APBs), which are formed during the growth of GaAs on (001) Ge substrate. The morphology and structural properties of InSb QDs can be varied by the change of controlled growth conditions. Optical phonons scatterings of the embedded InSb QDs are revealed by Raman spectroscopy. The low-temperature PL emission energy of InSb/GaAs QDs is in the range of 1.18-1.29 eV. The power-dependent PL spectroscopy confirms the type-II band alignment in this system. The thermal activation energies (22.7 meV and 146.5 meV) are extracted from the temperature-dependent PL spectroscopy (10-140 K). The polarization-dependent PL spectroscopy is performed and exhibits the polarization degree of 18%, which is attributed to the shape anisotropy of buried InSb QDs.
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