Fabrication of Sn doped MoO3 photoelectric film via solid-state reaction combining with thermal evaporation deposition

Sn doped MoO3 thin film was prepared via combining the solid-state reaction between Sn2+ and MoO3 with thermal deposition technology. Sn doped MoO3 powder was obtained by simply grinding powders containing SnCl2 and MoO3. This process is a pure solid-state reaction, which is simple, safe and highly efficient. Furthermore, the thermal deposition technology was used to realize the controllable fabrication of uniform broadband absorption films. It's demonstrated that the photoresponse range of Sn doped MoO3 thin film can be extended to 1550 nm, indicating its potential for broadband photodetection. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

The study successfully prepared Sn doped MoO3 thin films through a combination of solid-state reaction and thermal deposition technology, demonstrating its potential for broadband photodetection with a photoresponse range extended to 1550 nm. The process is simple, safe, efficient, and allows for controllable fabrication of uniform broadband absorption films.