Developing of thermal stability of BaSi2O5: Eu2+ phosphor with different trap levels

Thermal quenching is a severe problem for phosphors applied to white light emitting diode field. To solve this problem, a series of phosphors are designed in this work. Different trap levels are introduced in the BaSi2O5: Eu2+ phosphor via different trivalent rare earth ions. Then the thermal stabilities of these different phosphors are investigated to explore the role of shallow or deep trap levels and the corresponding schematic diagram is proposed. Our results could provide the basics for design phosphors with better thermal stability. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

Different phosphors with varying trap levels were designed in this study to address thermal quenching in white light emitting diodes. The thermal stabilities of these phosphors were investigated to understand the role of different trap levels, leading to the proposal of a schematic diagram. These results lay the groundwork for designing phosphors with improved thermal stability.