Approaching ultrathin VO2 films on sapphire (001) substrates by biased reactive sputtering: Characteristic morphology and its effect on the infrared-light switching

Ultrathin VO2 films with insulator-metal transition (IMT) were successfully fabricated on sapphire (001) substrates by utilizing radio frequency-biased reactive sputtering. We realized a 6nm-thick VO2 film that shows resistance change over 2 orders of magnitude. Microscopic observations combined with energy dispersive x-ray analyses revealed characteristic networking morphology in VO2 films with thickness up to around 10nm. It was found through micro-Raman analyses that a 30nm-thick film possessed flat surface and ordered lattice with strong in-plane tensile stress. We evaluated the thickness dependence of optical switching performance for infrared-light. The results suggest that the thickness of the VO2 films should be carefully selected for realizing required performances of optical switching, which depends on not only IMT but also characteristic morphological aspects.

Automated summary

Ultrathin VO2 films exhibiting insulator-metal transition were successfully fabricated on sapphire substrates using radio frequency-biased reactive sputtering. A 6nm-thick VO2 film showed significant resistance change over 2 orders of magnitude. Films with thickness up to around 10nm displayed characteristic networking morphology. Additionally, a 30nm-thick film demonstrated a flat surface, ordered lattice, and strong in-plane tensile stress.