Thermal atomic layer etching of amorphous and crystalline Al2O3 films

Thermal atomic layer etching (ALE) can be achieved with sequential, self-limiting surface reactions. One mechanism for thermal ALE is based on fluorination and ligand-exchange reactions. For metal oxide ALE, fluorination converts the metal oxide to a metal fluoride. The ligand-exchange reaction then removes the metal fluoride by forming volatile products. Previous studies have demonstrated the thermal ALE of amorphous Al2O3 films. However, no previous investigations have explored the differences between the thermal ALE of amorphous and crystalline Al2O3 films. This study explored the thermal ALE of amorphous and crystalline Al2O3 films. HF, SF4, or XeF2 were used as the fluorination reactants. Trimethylaluminum (TMA) or dimethylaluminum chloride (DMAC) were used as the metal precursors for ligand-exchange. Spectroscopic ellipsometry measurements revealed that the amorphous Al2O3 films had much higher etch rates than the crystalline Al2O3 films. When using HF and TMA at 300 degrees C, the amorphous Al2O3 film was removed at an etch rate of 0.78 angstrom/cycle. For the crystalline Al2O3 film, an etch rate of 0.06 angstrom/cycle was initially observed prior to the stoppage of etching after removing about 10 angstrom of the film. Thermal ALE with HF and DMAC resulted in similar results. Etch rates of 0.60 and 0.03 angstrom/cycle were measured for amorphous and crystalline Al2O3 films at 300 degrees C, respectively. Other fluorination agents, such as SF4 or XeF2, were also used together with TMA or DMAC for Al2O3 ALE. These reactants for fluorination and ligand-exchange were able to etch amorphous Al2O3 films at 300 degrees C. However, they were unable to etch crystalline Al2O3 film at 300 degrees C beyond the initial 10-20 angstrom surface layer. The investigations also examined the effect of annealing temperature on the etch rate per cycle using HF and TMA as the reactants at 300 degrees C. Amorphous Al2O3 films were etched at approximately the same etch rate of 0.78 angstrom/cycle until the crystallization of amorphous Al2O3 films at >= 880 degrees C. The differences between amorphous and crystalline Al2O3 thermal ALE could be used to obtain selective thermal ALE of amorphous Al2O3 in the presence of crystalline Al2O3.

Automated summary

Thermal atomic layer etching (ALE) is achieved through fluorination and ligand-exchange reactions, with significantly higher etch rates observed for amorphous Al2O3 films compared to crystalline Al2O3 films. The study demonstrated distinct effects of thermal ALE on amorphous versus crystalline Al2O3 films.