Low temperature seamless joining of SiC using a Ytterbium film

Monolithic SiC, for the first time, was seamless joined at a low temperatu r e of 1200 degrees C using electric field-assisted sintering technology. A 300 nm Yb coating on SiC was used as the joining filler to form Yb3Si2C2 via an in-situ reaction with the SiC. A liquid phase was formed by an eutectic reaction between Yb3Si2C2 and SiC. Almost completely seamless joints were formed by the precipitated SiC grains, which were fully consolidated with the SiC matrix with the help of in-situ formed liquid phase, followed by its elimination under the uniaxial pressure. The bending strength of the seamless joint joined at 1500 degrees C for 15 min was as high as 257.2 +/- 31.1 MPa, which was comparable to the strength of the SiC matrix. As a result, the failure occurred in the matr i x indicated a sound joint was obtained. The proposed low temperature seamless joining could potentially be used for joining of SiC-based composite.

Automated summary

The study successfully achieved seamless joining of monolithic SiC at a low temperature using electric field-assisted sintering technology, with Yb coating on SiC forming Yb3Si2C2 to create almost completely seamless joints. The high bending strength of the joints indicates a sound connection, potentially useful for SiC-based composites.