Journal
JOURNAL OF RAMAN SPECTROSCOPY
Volume 52, Issue 12, Pages 2160-2165Publisher
WILEY
DOI: 10.1002/jrs.6228
Keywords
deep ultraviolet excitation; hexagonal boron nitride; interference effect; multilayered dielectric structure; two-dimensional material
Categories
Funding
- National Key Research and Development Program of China [2016YFA0301204]
- National Natural Science Foundation of China [11874350, 12004377]
Ask authors/readers for more resources
By adjusting the thickness of the SiO 2 layer in the SiO 2/Si substrate, Raman signals from ultra-thin layered materials and the underlying substrate can be significantly enhanced under deep ultraviolet excitation.
We take hexagonal boron nitride (hBN) flakes exfoliated on SiO 2/Si substrates as a prototype, to demonstrate how to enhance the Raman signals both from ultra-thin layered materials and the underlying opaque substrate excited by deep ultraviolet (DUV) laser. We found that the interference effect in the hBN/SiO 2/Si multilayered structure can largely enhance Raman intensity of hBN flake and the underlying Si substrate under 266-nm excitation. This enhancement effect is more significant than that under visible excitation. With increasing the thickness of SiO 2 layer in the substrate, the corresponding hBN and Si Raman intensity can vary by up to similar to 4 and similar to 2 orders of magnitude under 266-nm excitation, respectively. This method can be applicable to enhance Raman signal from other two-dimensional materials under DUV excitation by tuning the thickness of SiO 2 layer in the SiO 2/Si substrate.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available