4.8 Article

Enhanced photoelectric performance of inverted CsPbI2Br perovskite solar cells with zwitterion modified ZnO cathode interlayer

Journal

JOURNAL OF POWER SOURCES
Volume 499, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.jpowsour.2021.229909

Keywords

ZnO cathode Interlayer; Zwitterion; Defect passivation; Energy level alignment; Stability

Funding

  1. Ningbo S&T Innovation 2025 Major Special Program, China [2018B10055]
  2. National Nature Science Foundation of China, China [61774160, 61875209]
  3. Ningbo Key Laboratory of Silicon and Organic Thin Film Optoelectronic Technologies
  4. NSF of Zhejiang Province of China [Y20B020032]

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Zwitterionic molecules are utilized to modify the ZnO cathode interlayer in inverted CsPbI2Br perovskite solar cells, passivating defects at the interface of CsPbI2Br/ZnO and improving electron extraction efficiency. This results in enhanced charge transfer, suppressed charge recombination, and desirable energy level alignment at the cathode contact, leading to superior optoelectronic device performance and stability. Additionally, the champion efficiency is significantly improved with V-OC up to 1.25 V and FF of 76.83%, while the optimized device maintains around 80% of its initial efficiency for 32 days under illumination and 18 days stored in ambient air.
All-inorganic perovskite solar cells (PSCs) are attracting more attention due to potential superior stability than organic-inorganic hybrid PSCs. Electrode Interface plays an important role in achieving efficient performance and high stability of the devices. Here, zwitterionic molecules 3-triphenylphosphaniumylpropane-1-sulfonate are adopted to modify ZnO cathode interlayer in inverted CsPbI2Br PSCs. By which, defects on ZnO surface and at the interface of CsPbI2Br/ZnO are passivated. More efficient electron extraction from perovskite to cathode is achieved due to enhanced charge transfer and suppressed charge recombination at the interface. Simultaneously, desirable energy level alignment at the cathode contact is formed. Consequently, superior optoelectronic device performance and stability are accomplished. Hugely improved champion efficiency of 14.62% is achieved with V-OC up to 1.25 V and FF of 76.83%, compared with the control device (PCE of 12.03%, V-OC of 1.168 V and FF of 66.58%). The optimized device remains similar to 80% of its initial efficiency for 32 days under illumination and for 18 days stored in ambient air.

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