Spin relaxation in diluted magnetic semiconductors: GaMnAs as example

The paper deals with a study of the magnetic impurities spin relaxation in the diluted magnetic semiconductors above the Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The proposed theory assumes the main channel of the spin relaxation being the mobile carriers, which provide the indirect interactions of the magnetic impurities. This theoretical model is supported by the experimental measurements of the manganese spin relaxation time in the GaMnAs by means of spin-flip Raman scattering. As has been found with a temperature increase the spin relaxation rate of the ferromagnetic samples grows, tending to that measured in a paramagnetic sample.

Automated summary

This paper investigates the magnetic impurities spin relaxation in diluted magnetic semiconductors, finding that the main channel of spin relaxation is through mobile carriers. Experimental results show that with an increase in temperature, the spin relaxation rate of ferromagnetic samples grows, approaching that measured in paramagnetic samples.