4.6 Article

The Gilbert damping of thickness-dependent epitaxial single-crystal Heusler Co2FeAl films at various temperatures

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 54, Issue 41, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ac15d0

Keywords

half-metal; Heusler alloy; Gilbert damping; anisotropy magnetoresistance; ferromagnetic resonance

Funding

  1. National Natural Science Foundation of China [51671099, 11974149, 51901163]
  2. Natural Science Foundation of Gansu Province [20JR5RA291]

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Investigations on Gilbert damping in epitaxial Heusler Co2FeAl films varying from 3 nm to 9 nm in thickness were conducted using broadband ferromagnetic resonance (FMR) in the temperature range of 5 K-300 K. The results showed a continuous decrease in Gilbert damping with increasing thickness of Co2FeAl films, as well as an enhanced peak of Gilbert damping observed at around 50 K, which was attributed to spin reorientation transition at the Co2FeAl/MgO interface. Additionally, analysis of the linewidth suggested that FMR linewidth in epitaxial Co2FeAl films was due to two-magnon scattering, originating from different order degrees of the B2 phase with the growth of CFA film impacting the control of magnetic damping in spin-based nanodevices.
Gilbert damping in epitaxial Heusler Co2FeAl films with thickness varying from 3 nm to 9 nm are investigated by broadband ferromagnetic resonance (FMR) with a temperature range of 5 K-300 K. Gilbert damping shows a continuous decrease with the increasing thickness of Co2FeAl films. Moreover, an enhanced peak of the Gilbert damping is observed with increasing temperature up to approximately 50 K for 3 nm, 6 nm and 9 nm thick Co2FeAl films, which may be attributed to the spin reorientation transition at Co2FeAl/MgO interface. Further, we analyzed the linewidth with a superposition of a uniaxial and a fourfold anisotropy for all samples, which suggests that FMR linewidth in epitaxial Co2FeAl films stems from two-magnon scattering. The change of Gilbert damping is confirmed to originate from various order degrees of the B2 phase with the growth of CFA film, impacting the control of magnetic damping in spin-based nanodevices.

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