Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures

Self-assembled GaSb/GaAs quantum-ring-with-dot structures (QRDSs) are the nanostructures exhibiting type-II band alignment. Each QRDS consists of both quantum ring (QR) and quantum dot (QD) parts which have their own energy levels. In this work, the carrier dynamics in the GaSb/GaAs QRDSs are explored and quantitatively described by a rate equation model which is developed from experimental photoluminescence (PL) spectra in literature. The model is comprised of the carrier transition rates and activation energies involved the transfer processes of thermal-excited carriers. The difference between the QR and QD PL intensities is also taken into account in the model. Electronic structures of a single QRDS are calculated in order to determine the overlap between electron and hole wave functions that can be used for estimating the radiative transition rates. Numerical values of the radiative and non-radiative transition rates, carrier capture and escape rates, and activation energies are presented. The PL spectra obtained from the model are consistent with the reported experimental data.

Automated summary

The carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures are explored and quantitatively described using a rate equation model developed from experimental photoluminescence spectra. The model considers carrier transition rates, activation energies, and the difference in PL intensities between quantum rings and quantum dots. The calculated electronic structures of a single QRDS are used to estimate radiative transition rates, with presented numerical values for various parameters matching experimental data.