Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 54, Issue 40, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac0b73
Keywords
Sr2IrO4 epitaxial film; doping; transport; magnetic; Raman spectrum
Categories
Funding
- National Key Research and Development Program of China [2017YFA0303403]
- National Natural Science Foundation of China [11874149, 12074119, 11774092]
- Shanghai Science and Technology Innovation Action Plan [19JC1416700]
- Natural Science Foundation of Shanghai [20ZR1418300]
- ECNU (East China Normal University) Multifunctional Platform for Innovation [006]
- Fundamental Research Funds for the Central Universities
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The doped Sr2IrO4 epitaxial film maintains a wide range of Mott variable-range hopping characteristics in transport, while magnetic properties and Raman characteristic peaks become weakened, proportional to the doping concentration. These observations can be attributed to localization caused by disorder after Ce doping and the presence of structural defects. The epitaxial strain may lead to important differences between Sr2IrO4 epitaxial thin films and bulk single crystals.
Sr2IrO4 is predicted to be superconducting and has received extensive attention in the field of high-temperature superconducting. Bulk Sr2IrO4 can be converted to a metallic state by slight chemical doping. Here we studied the structure, morphology, transport and magnetism of (Sr1-x Ce (x) )(2)IrO4 (x= 0, 0.0125, 0.025, 0.05) epitaxial films grown on (LaAlO3)(0.3)(Sr2AlTaO6)(0.35) substrates. Unlike the bulk Sr2IrO4 material, the doped Sr2IrO4 epitaxial film maintains a wide range of Mott variable-range hopping characteristics in transport. Meanwhile, the magnetic properties and Raman characteristic peaks of the doped films become weakened, and the degree of weakening is proportional to the doping concentration. These observations can be attributed to the localization caused by disorder after Ce doping and the presence of structural defects. The epitaxial strain may result in important differences between Sr2IrO4 epitaxial thin films and bulk single crystals.
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