Controllable Schottky barriers by ferroelectric switching in graphene/In2Te3 heterostructures

Van der Waals (vdWs) heterostructures have attracted significant research attention due to their tunable electronic structures and potential for device applications. In this study, the interfacial properties of graphene/In2Te3 heterostructures are systematically explored by employing first principles calculations. It is revealed that the electronic structures of graphene and In2Te3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be realized for the graphene/In2Te3 heterostructures by switching the polarity of In2Te3. The findings reported in this study are not only vital for basic theoretical research, but also provide a feasible strategy to control the Schottky barriers for vdWs heterostructures.

Automated summary

This study systematically explores the interfacial properties of graphene/In2Te3 heterostructures by employing first principles calculations. The electronic structures of graphene and In2Te3 monolayer are well preserved upon contact, and the transition between n-type Ohmic and p-type Schottky contacts can be realized by switching the polarity of In2Te3.