Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 12, Issue 37, Pages 8999-9010Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.1c02332
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Funding
- Future Material Discovery Program through the National Research Foundation of Korea [2016M3D1A1027666, 2018M3D1A1058793]
- Innovative Process Design Center for Strategic Structural Materials through the Engineering Research Center. [2020R1A5A6017701]
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Halide perovskites are noted for their exotic properties and have shown promise for use in memristors, particularly in resistive switching memory devices and artificial synapses for neuromorphic computing. Current research focuses on state-of-the-art perovskite-based memristive devices and opportunities to improve their commercial viability.
Halide perovskites have been noted for their exotic properties such as fast ion migration, tunable composition, facile synthetic routes, and flexibility in addition to large light absorption coefficients, long carrier diffusion lengths, and high defect tolerance. These properties have made halide perovskites promising materials for memristors. Applications in the field of resistive switching memory devices and artificial synapses for neuromorphic computing are especially noteworthy. This Perspective covers state-of-the-art perovskite-based memristive devices. Moreover, the fundamental mechanisms and characteristics of perovskite-based memristors are elucidated. Interesting opportunities to improve the performance of perovskitebased memristors for commercialization are provided, including improving film uniformity and air stability, controlling the stoichiometry, finding new all-inorganic and lead-free halide perovskites, and making perovskites into single crystals or quantum dots. We expect our Perspective to be the foundation of realizing next-generation halide perovskite-based memristors.
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