Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 12, Issue 29, Pages 6927-6933Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.1c01739
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Funding
- National Natural Science Foundation of China [51673217]
- Hunan Provincial Innovation Foundation for Postgraduate [CX20200306]
- Fundamental Research Funds for the Central Universities of Central South University [1053320192112]
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This study aims to achieve low-temperature black phase transition using heterovalent doped CsPb1-xBixI3 and further explores the feasibility of doping Bi3+ through vacuum deposition. However, the coevaporated films are mainly composed of another hexagonal perovskite phase and fail to reduce the black phase transition temperature.
The B-site doped CsPbI3 has been demonstrated to be very promising for photovoltaics owing to its low black phase transition temperature. Though B-site doped black-CsPbI3 perovskites have been successfully achieved by solution-processing, it is unclear whether these systems are available by other methods such as vacuum deposition. In this work, heterovalent doped CsPb1-xBixI3 is targeted. To incorporate Bi3+ into the final film via vacuum deposition, the solid solution precursor Pb1-xBixI2 (0.01 <= x <= 0.04) is developed. However, these coevaporated films not only are dominated by another hexagonal perovskite phase but also fail to decrease the black phase transition temperature. The role of Bi3+ in the formation of the black phase is further studied by solution methods with different types of precursors. It is demonstrated that the key factor in the low-temperature black phase transition is small grain size, as well as the colloid size within the precursor solution, rather than simple substitution of Pb(2+ )with Bi3+.
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