Growth of continuous GaN films on ZnO buffer layer by chemical vapor deposition for ultraviolet photodetector

In this work, c-axis-oriented continuous GaN films have been synthesized by the chemical vapor deposition (CVD) method using ZnO material as the intermediate buffer layer. The GaN films with different growth temperatures exhibit high crystal quality and small surface roughness due to the same crystal structure and low lattice mismatches rate between GaN and ZnO materials. Meanwhile, the UV photodetector based on the CVD-grown GaN film exhibits a relatively high responsivity, fast rise and decay time, and good thermal stability. Our work provides a simple and promising CVD method to fabricate continuous GaN film for electronic and optoelectronic devices.

Automated summary

Continuous c-axis-oriented GaN films were synthesized using a CVD method with ZnO as the intermediate buffer layer. These films exhibited high crystal quality and low surface roughness due to the similar crystal structure and low lattice mismatches between GaN and ZnO. The UV photodetector based on these films showed high responsivity, fast response times, and good thermal stability.