The temperature dependence of current-voltage characteristics of V2O5/p-Si heterojunction diode

In this study, the effect of vanadium pentoxide (V2O5) material on the electrical properties of Schottky diodes was investigated. The Al metal was evaporated by thermal evaporation method on the matte surface of the p-Si crystal. The V2O5 material of 10 nm thickness was evaporated on the other surface of the crystal using the same method. Finally, Al metal was evaporated on the V2O5 material by DC sputtering method. Thus, Al/V2O5/p-Si/Al and reference Al/p-Si/Al Schottky diodes were obtained. The AFM image and absorption measurement of V2O5 material were taken. The I-V (current-voltage) characteristics of both structures are examined at room temperature and it is determined that the V2O5 material causes improvements in the electrical properties of the diode. The I-V measurements of Al/V2O5/p-Si/Al diode were analyzed between 100 and 380 K. The ideality factor (n), barrier height (phi(b)) and series resistance (R-s) values of diode calculated for different temperature values. These measurements showed that the diode parameters vary significantly with temperature. This change is attributed to the inhomogeneous distribution in the potential barrier. Also, the C-V (capacitance-voltage) characteristic of this diode was analyzed at room temperature. The variation of the diode's capacitance and diode parameters depending on the frequency was examined.

Automated summary

This study investigated the effect of V2O5 material on electrical properties of Schottky diodes, and found that V2O5 material can improve the electrical performance of the diode. The diode parameters vary significantly with temperature, which is attributed to the inhomogeneous distribution in the potential barrier.