Related references
Note: Only part of the references are listed.Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique
Tian-Yu Wang et al.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY (2021)
Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses
Muhammad Ismail et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2021)
Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device
Tukaram D. Dongale et al.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY (2021)
Uniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition
Meng Qi et al.
APPLIED PHYSICS LETTERS (2020)
Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems
Muhammad Ismail et al.
APPLIED SURFACE SCIENCE (2020)
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices
Ji-Ho Ryu et al.
APPLIED SURFACE SCIENCE (2020)
The coexistence of threshold and memory switching characteristics of ALD HfO2memristor synaptic arrays for energy-efficient neuromorphic computing
Haider Abbas et al.
NANOSCALE (2020)
Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices
Haider Abbas et al.
APPLIED PHYSICS LETTERS (2019)
Forming-free resistive switching characteristics in manganese oxide and hafnium oxide devices
Quanli Hu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Room temperature deposited oxygen-deficient CeO2-x layer for multilevel resistive switching memory
Muhammad Ismail et al.
APPLIED SURFACE SCIENCE (2019)
Transition from unipolar to bipolar, multilevel switching, abrupt and gradual reset phenomena in a TaN/CeO2/Ti: /Pt memory devices
Anwar Manzoor Rana et al.
MATERIALS RESEARCH BULLETIN (2019)
Coexistence of resistive switching and magnetism modulation in sol-gel derived nanocrystalline spinel Co3O4 thin films
Chuangye Yao et al.
CURRENT APPLIED PHYSICS (2019)
Highly durable and flexible gallium-based oxide conductive-bridging random access memory
Kai-Jhih Gan et al.
SCIENTIFIC REPORTS (2019)
Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory
Muhammad Ismail et al.
APPLIED PHYSICS LETTERS (2019)
Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching
Muhammad Ismail et al.
APPLIED SURFACE SCIENCE (2019)
Highly uniform switching of HfO2-x based RRAM achieved through Ar plasma treatment for low power and multilevel storage
Meng Qi et al.
APPLIED SURFACE SCIENCE (2018)
Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOx Gate Insulator
Ravindra Naik Bukke et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices
Haider Abbas et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming
S. Poblador et al.
MICROELECTRONIC ENGINEERING (2018)
Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory
Xiaoning Zhao et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
Effect of Bilayer CeO2-x/ZnO and ZnO/CeO2-x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory
Muhammad Ismail et al.
NANOSCALE RESEARCH LETTERS (2018)
Resistive Switching Characteristics of Tantalum Oxide and Titanium Oxide Heterojunction Devices
Haider Abbas et al.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2017)
Efficient photoelectrochemical water splitting on ultrasmall defect-rich TaOx nanoclusters enhanced by size-selected Pt nanocluster promoters
Saurabh Srivastava et al.
NANOSCALE (2017)
Impact of work function on the resistive switching characteristics of M/ZnO/CeO2/Pt devices
Shazia Jabeen et al.
MATERIALS RESEARCH EXPRESS (2017)
Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory
Youngjin Kirn et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant
M. Ismail et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
High speed and multi-level resistive switching capability of Ta2O5 thin films for nonvolatile memory application
Wei Hu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2016)
Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer
JiaJi Wu et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2016)
Multilevel resistive switching and nonvolatile memory effects in epoxy methacrylate resin and carbon nanotube composite films
Yanmei Sun et al.
ORGANIC ELECTRONICS (2016)
Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering
Amit Prakash et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications
Muhammad Ismail et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2015)
Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
Zedong Xu et al.
SCIENTIFIC REPORTS (2015)
Physical and chemical mechanisms in oxide-based resistance random access memory
Kuan-Chang Chang et al.
NANOSCALE RESEARCH LETTERS (2015)
Performance stability and functional reliability in bipolar resistive switching of bilayer ceria based resistive random access memory devices
Muhammad Ismail et al.
JOURNAL OF APPLIED PHYSICS (2015)
High-Performance Multilevel Resistive Switching Gadolinium Oxide Memristors With Hydrogen Plasma Immersion Ion Implantation Treatment
Jer-Chyi Wang et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
F. Pan et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)
Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering
V. Y. -Q. Zhuo et al.
APPLIED PHYSICS LETTERS (2013)
Revelation on the Interrelated Mechanism of Polarity-Dependent and Multilevel Resistive Switching in TaOx-Based Memory Devices
Ying-Chuan Chen et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2013)
Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures
Congli He et al.
ACS NANO (2012)
Multilevel resistance switching of Ag/Nb-doped SrTiO3/Ti structure
Y. Zhang et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2012)
Multibit Operation of TiOx-Based ReRAM by Schottky Barrier Height Engineering
Jubong Park et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
Chih-Yang Lin et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Identification of a determining parameter for resistive switching of TiO2 thin films -: art. no. 262907
C Rohde et al.
APPLIED PHYSICS LETTERS (2005)