4.7 Article

Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

Journal

JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 39, Issue 16, Pages 5263-5269

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2021.3084324

Keywords

Silicon; Optical waveguides; Plugs; Epitaxial growth; Dark current; Photodetectors; Photonics; III-V semiconductor materials; monolithic integration; nano-ridge engineering; optical simulation; photodetectors; quantum well devices; semiconductor waveguides; silicon photonics

Funding

  1. IMEC's industry-affiliation Optical I/O RD Program

Ask authors/readers for more resources

The study presents high-quality InGaAs/GaAs multi-quantum well waveguide photodetectors monolithically integrated through metalorganic vapor-phase selective-area epitaxial growth and contact metallization in a 300-mm CMOS pilot line. The implementation of nano-ridge engineering concept along with precise control of nano-ridge cross section dimensions and composition results in high internal responsivities of the photodetectors. The III-V/Si nano-ridge epitaxy and waveguide device concept show strong potential to complement Silicon Photonics toolbox with high-quality, high-throughput III-V functionality.
We report on high-quality InGaAs/GaAs multi-quantum well waveguide photodetectors, monolithically integrated through metalorganic vapor-phase selective-area epitaxial growth and contact metallization in a 300-mm CMOS pilot line. The photodetectors are implemented using the nano-ridge engineering concept, leveraging aspect-ratio trapping in combination with precise control of the nano-ridge cross section dimensions and composition. The InGaAs/GaAs p-i-n nano-ridge photodetectors are shown to achieve high internal responsivities of up to 0.65 A/W at -1 V bias and 1020 nm wavelength. A clear correlation is observed between measured responsivity and contact-plug design, correlating well with simulation models. In addition, a record-low dark current density of 1.98 x 10(-8)A/cm(2) and low absolute dark currents of <1 pA are demonstrated, illustrating the high quality of the III-V materials and effective in-situ InGaP surface passivation layers. Initial RF measurements suggest RC-limited photodetection bandwidths in the GHz range. These results illustrate the strong potential of the III-V/Si nano-ridge epitaxy and waveguide device concept, to complement the Silicon Photonics toolbox with high-quality, high-throughput III-V functionality.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available