Post-Fabrication Trimming of Silicon Photonic Ring Resonators at Wafer-Scale

Silicon ring resonator-based devices, such as modulators, detectors, filters, and switches, play important roles in integrated photonic circuits for optical communication, high-performance computing, and sensing applications. However, the high sensitivity to fabrication variations has limited their volume manufacturability and commercial adoption. Here, we report a low-cost post-fabrication trimming method to tune the resonance wavelength of a silicon ring resonator and correct for fabrication variations at wafer-scale. We use Ge implant to create an index trimmable section in the ring resonator and an on-chip heater to apply a precise and localized thermal annealing to tune and set its resonance to a desired wavelength. We demonstrate resonance wavelength trimming of ring resonators fabricated across a 300 mm silicon-on-insulator (SOI) wafer to within +/- 32 pm of a target wavelength of 1310 nm, providing a viable path to high-volume manufacturing and opening up new practical applications for these devices.

Automated summary

Silicon ring resonator-based devices are crucial for integrated photonics circuits, but their commercial adoption has been hindered by sensitivity to fabrication variations. A low-cost post-fabrication trimming method using Ge implant and on-chip heater has been proposed to tune the resonance wavelength and correct for deviations, offering a viable path for high-volume manufacturing and practical applications.