Journal
JOURNAL OF APPLIED PHYSICS
Volume 129, Issue 24, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0050810
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Funding
- National Natural Science Foundation of China (NNSFC) [51872161, 11904198]
- Shandong Provincial Natural Science Foundation [ZR2017ZB0316]
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The large-area film growth of all-inorganic perovskite CsPbBr3 was demonstrated using radio frequency magnetron sputtering technology, avoiding the use of toxic organic solvents. Studies showed that high-quality CsPbBr3 films can be grown even on ordinary glass substrates under optimized sputtering conditions.
In this work, we demonstrated the large-area film growth of all-inorganic perovskite CsPbBr3 with semiconductor industry compatible radio frequency magneton sputtering technology. This approach avoids the use of toxic organic solvents, which are required extensively for the solution growth process of these perovskite films. Even on ordinary glass substrates, the CsPbBr3 film of 100cm(2) with a single phase and ultra-smooth surface can be grown under optimized sputtering conditions, among which the substrate temperature is proved very important. Temperature-dependent photoluminescence spectra and femtosecond transient absorption spectra studies show that no subband defect levels are observed in such perovskite films. The temperature-dependent resistivity measurement exhibits a typical thermally activated electrical behavior, and a bandgap of 2.24eV is obtained, which is consistent with the optical measurements. Therefore, both the optical and electrical studies indicate that the CsPbBr3 film with high optical quality can be grown with effective one-step sputtering technology. Published under an exclusive license by AIP Publishing.
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