4.6 Article

Multimicroscopy of cross-section zincblende GaN LED heterostructure

Related references

Note: Only part of the references are listed.
Article Physics, Applied

Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Petr Vacek et al.

Summary: The defect structure of zincblende GaN nucleation layers grown on 3C-SiC/Si (001) was investigated, which includes perfect dislocations, partial dislocations, and stacking faults. These defects, especially perfect and partial dislocations, help relieve the compressive lattice mismatch strain in GaN layers. The stacking faults in the layers are mainly bounded by 30 degrees Shockley partial dislocations and occasionally by Lomer-Cottrell partial dislocations, originating from the dissociation of perfect dislocations or direct nucleation of partial dislocations loops from the surface.

JOURNAL OF APPLIED PHYSICS (2021)

Article Physics, Applied

Alloy segregation at stacking faults in zincblende GaN heterostructures

B. Ding et al.

JOURNAL OF APPLIED PHYSICS (2020)

Article Nanoscience & Nanotechnology

InGaN Quantum Dots Studied by Correlative Microscopy Techniques for Enhanced Light-Emitting Diodes

Ioanna Dimkou et al.

ACS APPLIED NANO MATERIALS (2020)

Article Physics, Applied

Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

Lok Yi Lee et al.

JOURNAL OF APPLIED PHYSICS (2019)

Article Nanoscience & Nanotechnology

Generated Carrier Dynamics in V-Pit-Enhanced InGaN/GaN Light-Emitting Diode

Idris A. Ajia et al.

ACS PHOTONICS (2018)

Article Physics, Applied

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

S. A. Church et al.

JOURNAL OF APPLIED PHYSICS (2018)

Proceedings Paper Nanoscience & Nanotechnology

Photoluminescence of magnesium and silicon doped cubic GaN

R. E. L. Powell et al.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 (2014)

Article Engineering, Electrical & Electronic

Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Daniel F. Feezell et al.

JOURNAL OF DISPLAY TECHNOLOGY (2013)

Article Engineering, Electrical & Electronic

Status and future of high-power light-emitting diodes for solid-state lighting

Michael R. Krames et al.

JOURNAL OF DISPLAY TECHNOLOGY (2007)

Review Physics, Applied

Luminescence properties of defects in GaN -: art. no. 061301

MA Reshchikov et al.

JOURNAL OF APPLIED PHYSICS (2005)

Review Physics, Applied

Band parameters for nitrogen-containing semiconductors

I Vurgaftman et al.

JOURNAL OF APPLIED PHYSICS (2003)

Article Physics, Applied

Electron-beam-induced damage in wurtzite InN

KA Mkhoyan et al.

APPLIED PHYSICS LETTERS (2003)