Two-dimensional carrier gas at complex oxide interfaces: Control of functionality

New functionalities and unexpected electronic structures can emerge in artificially engineered complex oxide heterointerfaces due to the coupling of multiple physical properties such as ferroelectricity, ferromagnetism, conductivity, charge transfer, etc. Here, we discuss heterointerfaces between perovskite oxides, SrTiO3, LaAlO3, and BaTiO3, as well as the rocksalt ferromagnetic semiconductor EuO. Combining theoretical analysis, experimental growth, and characterization techniques with atomic level resolution, we highlight some of these intriguing emergent interfacial phenomena. We consider several means of creating a two-dimensional carrier gas: through band offset engineering, polarization doping, and oxygen vacancy doping. In addition, we also discuss ways of manipulating these electron/hole gases and their potential applications in new electronic devices.

Automated summary

New functionalities and unexpected electronic structures can emerge in artificially engineered complex oxide heterointerfaces through the coupling of multiple physical properties. By combining theoretical analysis, experimental growth, and atomic level resolution techniques, intriguing emergent interfacial phenomena can be highlighted. Various methods such as band offset engineering, polarization doping, and oxygen vacancy doping are discussed for creating a two-dimensional carrier gas and manipulating electron/hole gases for potential applications in new electronic devices.